High-Frequency Circuit Design For Power Electronics In Modern Communication Devices

Authors

  • Dr. M. Madhusudhan Reddy Assistant Professor, Department of Electronics and Communication Engineering, G Pulla Reddy Engineering College(A), Kurnool, Andhra Pradesh-518007
  • Dr. Ranadheer Reddy Ragidi Associate Professor, Department of Electrical and Electronics Engineering, Balaji Institute of Technology and Science, Laknepally, Narsampeta, Warangal, Telangana - 506331
  • Nagalakshmi Yarlagadda Associate Professor, Geethanjali College of Engineering and Technology, Cheeryal, Hyderabad.
  • Dr. Jaghannath.K Associate Professor, Department of EEE, SVS Group of institutions, Hanamkonda-506015
  • Mr.G. Poshamallu Assistant Professor, Department of ECE, St.Martin's Engineering College, Dhulapally,Kompally
  • Dr. D.Jayahar Assistant Professor, Department of Electrical Engineering, Dnyanshree Institute of Engineering and Technology, Sajjangad Road, Satara, Maharashtra- 415013

DOI:

https://doi.org/10.63278/mme.vi.1597

Keywords:

High-Frequency Circuit Design, Power Electronics, Communication Devices, Signal Integrity, Impedance Matching, Thermal Management, Gan, Sic, Miniaturization, Performance Evaluation.

Abstract

In the rapidly changing world of modern communication devices, high-frequency circuit design is crucial to the successful working of the power electronics. These circuits are vital in improving the performance and the energy consumption of the communication systems, in wireless communication, satellite communication and mobile phones. This paper describes the developments in high-frequency circuit design used in the power electronics of modern communication devices. It discusses challenges of operations such as high-frequency signal integrity, impedance matching, thermal management, and miniaturization. The study presents an exhaustive review of different design methodologies, circuit topologies and materials that are adopted in the high-frequency power electronics that are proceeded by detailed metrics of their performance. The findings underscore the necessity of incorporating advanced technologies like gallium nitride (GaN) and silicon carbide (SiC) into design procedures that will produce better power efficiency and less heat dissipation.

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Published

2025-05-07

How to Cite

Reddy, Dr. M. Madhusudhan, Dr. Ranadheer Reddy Ragidi, Nagalakshmi Yarlagadda, Dr. Jaghannath.K, Mr.G. Poshamallu, and Dr. D.Jayahar. 2025. “High-Frequency Circuit Design For Power Electronics In Modern Communication Devices”. Metallurgical and Materials Engineering, May, 419-29. https://doi.org/10.63278/mme.vi.1597.

Issue

Section

Research